looking for accurate n-jfet spice models

A

Andy I.

Guest
Hello:

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.

Thank you for any help.

-- Andy
 
On Fri, 10 Jun 2005 13:09:22 +0200, "Andy I."
<smdg..remov..@..remov..worldonlinefr..> wrote:

Hello:

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.

Thank you for any help.

-- Andy
I've not heard issues with the accuracy JFET models, just MOS.

Here's the 2N4339.....

..model J2N4339 NJF(Beta=555.8u Betatce=-.5 Rd=1 Rs=1 Lambda=3.5m
Vto=-1.218
+ Vtotc=-2.5m Is=114.5f Isr=1.091p N=1 Nr=2 Xti=3
Alpha=506.8u
+ Vk=251.7 Cgd=2.8p M=.2271 Pb=.5 Fc=.5 Cgs=2.916p
Kf=2.052E-18
+ Af=1)
* National pid=52 case=TO18
* 88-08-02 rmn BVmin=50

...Jim Thompson
--
| James E.Thompson, P.E. | mens |
| Analog Innovations, Inc. | et |
| Analog/Mixed-Signal ASIC's and Discrete Systems | manus |
| Phoenix, Arizona Voice:(480)460-2350 | |
| E-mail Address at Website Fax:(480)460-2142 | Brass Rat |
| http://www.analog-innovations.com | 1962 |

I love to cook with wine. Sometimes I even put it in the food.
 
Andy I. wrote...
I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.
The problem isn't so much getting a spice model that matches one
particular JFET, as it is dealing with the wide variations in JFET
Vgs at a given drain current, typically 1.5V or more for parts
within a given production run and much higher otherwise. This is
the primary difficult issue you have to solve in your design, and
in your spice modeling as well.

That said, it's true spice JFET models do fail to properly model
the subthreshold region. The JFET drain current should follow an
exponential law, exactly like BJTs, where Id = k1 e^(Vgs/nVT). I
have observed n = 1.05 across many parts. Instead the JFET drain
current rapidly plummets to zero, which means the models report
an artificially high transconductance at low currents.

This problem is similar to the one we encounter in the subthreshold
region in MOSFET spice models, but in practice it's not quite as
painful for JFET users. That's because those of us that use power
MOSEFTs are often using them in the subthreshold region or in the
transition to subthreshold, where the model errors are devastating.
The solution, should you need to model JFETs at *very* low drain
currents, is to modify the model as I described for MOSFETs.

By contrast, most linear-amplifier JFET design use occurs in the
Id = k (Vgs - Vth)^2 region where the spice JFET modeling is pretty
accurate. Here I've found the parameter k can vary from manufacturer
to manufacturer for a given type, such as the 2n5458 from ON Semi or
Fairchild, but stays the same for a given manufacturer, even over
different runs. But as I said, the variation in Vth is dramatic.
Again, this is for the "saturation" region, with Vds > 1V, etc.,
where the JFET acts as a transconductance device, with its current
programmed by Vgs-Vth, and is only a weak function of Vds.

As for the other popular JFET "linear" region, at low Vds voltages,
where the JFET acts as a resistor programmed by the gate voltage,
namely 1/Rds = 2k [(Vgs-Vth) - Vds/2], I haven't investigated to
see how well the spice models do. But again, large variations in
Vth for real JFETs will get you into trouble if you're not careful.


--
Thanks,
- Win
 
Jim Thompson wrote...
On Fri, 10 Jun 2005 "Andy I." wrote:

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.

I've not heard issues with the accuracy JFET models, just MOS.

Here's the 2N4339.....
Sorry Jim, but this model has the same old complete failure to
model the subthreshold region. Below 1uA it drops like a rock,
and it's erroneous above that... Of course, as I said in the
other post, given the low currents at which it happens, this
modeling failure isn't so devastating as it is when using power
MOSFETs in their linear region.


--
Thanks,
- Win
 
On 10 Jun 2005 08:13:03 -0700, Winfield Hill
<hill_a@t_rowland-dotties-harvard-dot.s-edu> wrote:

Jim Thompson wrote...

On Fri, 10 Jun 2005 "Andy I." wrote:

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.

I've not heard issues with the accuracy JFET models, just MOS.

Here's the 2N4339.....

Sorry Jim, but this model has the same old complete failure to
model the subthreshold region. Below 1uA it drops like a rock,
and it's erroneous above that... Of course, as I said in the
other post, given the low currents at which it happens, this
modeling failure isn't so devastating as it is when using power
MOSFETs in their linear region.
Yep, There aren't many users concerned with JFET behavior below
cut-off.

...Jim Thompson
--
| James E.Thompson, P.E. | mens |
| Analog Innovations, Inc. | et |
| Analog/Mixed-Signal ASIC's and Discrete Systems | manus |
| Phoenix, Arizona Voice:(480)460-2350 | |
| E-mail Address at Website Fax:(480)460-2142 | Brass Rat |
| http://www.analog-innovations.com | 1962 |

I love to cook with wine. Sometimes I even put it in the food.
 
Jim Thompson wrote:
On Fri, 10 Jun 2005 13:09:22 +0200, "Andy I."
smdg..remov..@..remov..worldonlinefr..> wrote:


Hello:

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.

Thank you for any help.

-- Andy


I've not heard issues with the accuracy JFET models, just MOS.

Here's the 2N4339.....

...
Thank you. Actually, this model was in my list, and I have managed to
track down the strange behaviour of the circuit to some problem with the
way the simulator was handling the inductances! But the sub-threshold
inadequacy of the models pointed out by Win Hill might indeed be a
source of inadequacy of the simulated behavious of my circuit. Please
see my other post.

-- Andy
 
Winfield Hill wrote:
Andy I. wrote...

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.


The problem isn't so much getting a spice model that matches one
particular JFET, as it is dealing with the wide variations in JFET
Vgs at a given drain current, typically 1.5V or more for parts
within a given production run and much higher otherwise. This is
the primary difficult issue you have to solve in your design, and
in your spice modeling as well.
Yes, I realise this is a challenge. At this time I believe I will be
able to cope with these variations.

That said, it's true spice JFET models do fail to properly model
the subthreshold region. The JFET drain current should follow an
exponential law, exactly like BJTs, where Id = k1 e^(Vgs/nVT). I
have observed n = 1.05 across many parts. Instead the JFET drain
current rapidly plummets to zero, which means the models report
an artificially high transconductance at low currents.

Indeed, this subtheshold inadequacy might be a key problem in my
simulation. I am trying to use as much dynamic range of the Rds as
possible, which, for some situations, brings the control loop stability
point close to Vgs(off). But the overall dynamics is such that the
control voltage easily overshoots below that Vgs(off) in those case, and
as you say the Ids drops like a rock - and the control loop does not
converge. I am not sure whether the correct exponential behaviour would
cure this, but I am very interested.

By the way, getting Ids drawed against Vgs, I can see the Ids
_decreasing_ on the left of Vgs(off) as Vgs increases, n-jfets!

The solution, should you need to model JFETs at *very* low drain
currents, is to modify the model as I described for MOSFETs.
Was this modification explained in this NG / a.b.s.e.? Is it in the
discussions about 2n7000?



By contrast, most linear-amplifier JFET design use occurs in the
Id = k (Vgs - Vth)^2 region where the spice JFET modeling is pretty
accurate. Here I've found the parameter k can vary from manufacturer
to manufacturer for a given type, such as the 2n5458 from ON Semi or
Fairchild, but stays the same for a given manufacturer, even over
different runs. But as I said, the variation in Vth is dramatic.
Again, this is for the "saturation" region, with Vds > 1V, etc.,
where the JFET acts as a transconductance device, with its current
programmed by Vgs-Vth, and is only a weak function of Vds.

As for the other popular JFET "linear" region, at low Vds voltages,
where the JFET acts as a resistor programmed by the gate voltage,
namely 1/Rds = 2k [(Vgs-Vth) - Vds/2], I haven't investigated to
see how well the spice models do. But again, large variations in
Vth for real JFETs will get you into trouble if you're not careful.
Thanks!

-- Andy
 
On Fri, 10 Jun 2005 22:37:16 +0200, "Andy I."
<smdg..remov..@..remov..worldonlinefr..> wrote:

Jim Thompson wrote:
On Fri, 10 Jun 2005 13:09:22 +0200, "Andy I."
smdg..remov..@..remov..worldonlinefr..> wrote:


Hello:

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.

Thank you for any help.

-- Andy


I've not heard issues with the accuracy JFET models, just MOS.

Here's the 2N4339.....

...

Thank you. Actually, this model was in my list, and I have managed to
track down the strange behaviour of the circuit to some problem with the
way the simulator was handling the inductances! But the sub-threshold
inadequacy of the models pointed out by Win Hill might indeed be a
source of inadequacy of the simulated behavious of my circuit. Please
see my other post.

-- Andy
Are you operating in the starved region below cut-off?

Or are your problems with linearity issues in the AGC? There are
biasing techniques to linearize the resistive behavior of JFET's

I haven't seen your "other post".

...Jim Thompson
--
| James E.Thompson, P.E. | mens |
| Analog Innovations, Inc. | et |
| Analog/Mixed-Signal ASIC's and Discrete Systems | manus |
| Phoenix, Arizona Voice:(480)460-2350 | |
| E-mail Address at Website Fax:(480)460-2142 | Brass Rat |
| http://www.analog-innovations.com | 1962 |

I love to cook with wine. Sometimes I even put it in the food.
 
Jim Thompson wrote:
Are you operating in the starved region below cut-off?

The control loop's drive of the n-jfet's gate sometimes overshoots below
cut-off, and the loop does not converge. I am not sure the correct
exponential model would provide for convergence, but I would like to try.

Or are your problems with linearity issues in the AGC? There are
biasing techniques to linearize the resistive behavior of JFET's
A resistance between the drain and the gate, with an equal resistance
between the gate and the drive? I have included this, the linearity in
the signal path looks ok.

I haven't seen your "other post".
I have posted it after the above reply, in reply to a post by Win Hill.
I hope you can see it now, I thought I would not duplicate the content
across different posts. I am sorry if this caused you an inconvenience.



-- Andy
 
On Fri, 10 Jun 2005 23:08:47 +0200, "Andy I."
<smdg..remov..@..remov..worldonlinefr..> wrote:

Jim Thompson wrote:

Are you operating in the starved region below cut-off?

The control loop's drive of the n-jfet's gate sometimes overshoots below
cut-off, and the loop does not converge.
You probably need a zero in your control loop.

I am not sure the correct
exponential model would provide for convergence, but I would like to try.

Or are your problems with linearity issues in the AGC? There are
biasing techniques to linearize the resistive behavior of JFET's

A resistance between the drain and the gate, with an equal resistance
between the gate and the drive? I have included this, the linearity in
the signal path looks ok.

I haven't seen your "other post".

I have posted it after the above reply, in reply to a post by Win Hill.
I hope you can see it now, I thought I would not duplicate the content
across different posts. I am sorry if this caused you an inconvenience.



-- Andy

...Jim Thompson
--
| James E.Thompson, P.E. | mens |
| Analog Innovations, Inc. | et |
| Analog/Mixed-Signal ASIC's and Discrete Systems | manus |
| Phoenix, Arizona Voice:(480)460-2350 | |
| E-mail Address at Website Fax:(480)460-2142 | Brass Rat |
| http://www.analog-innovations.com | 1962 |

I love to cook with wine. Sometimes I even put it in the food.
 
"Winfield Hill" <hill_a@t_rowland-dotties-harvard-dot.s-edu> wrote in
message news:d8c7b101e11@drn.newsguy.com...
Andy I. wrote...

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the models
available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like 2N4339,
J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than 1.5k at
Vds=Vgs=0.

The problem isn't so much getting a spice model that matches one
particular JFET, as it is dealing with the wide variations in JFET
Vgs at a given drain current, typically 1.5V or more for parts
within a given production run and much higher otherwise. This is
the primary difficult issue you have to solve in your design, and
in your spice modeling as well.
Let me chime in and say that Win is absolutely right about
the JFET variation. I have a design where I designed
JFETs in for volume control of two channels and
AGC (AVC) for two audio power amp channels.
I gave up on the AGC due to the variation between JFETS.
On the volume controls, I added trimpots to set the max Vgs
and still about 1 out of 8 JFETS are too far off for the circuit
and production replaces them. It's almost Select At Test
which is an expensive no-no in production. I won't make the
mistake again of trying to use JFETs in this manner.

Carey
 
Winfield Hill wrote:
Andy I. wrote...

I am designing an AGC loop using a low power n-jfet. I would like to
check it on Spice beforehand, but I have the impression that the
models available are often not quite trustworthy.

So, I am looking for accurate models of the behaviour down to the
cut-off voltage, for low (+ and - 0.5V) Vds, for the parts like
2N4339, J201, J113: Vgs(off) between -0.5 and -3V, Rds(on) less than
1.5k at Vds=Vgs=0.

The problem isn't so much getting a spice model that matches one
particular JFET, as it is dealing with the wide variations in JFET
Vgs at a given drain current, typically 1.5V or more for parts
within a given production run and much higher otherwise. This is
the primary difficult issue you have to solve in your design, and
in your spice modeling as well.

That said, it's true spice JFET models do fail to properly model
the subthreshold region. The JFET drain current should follow an
exponential law, exactly like BJTs, where Id = k1 e^(Vgs/nVT). I
have observed n = 1.05 across many parts. Instead the JFET drain
current rapidly plummets to zero, which means the models report
an artificially high transconductance at low currents.
Note that a few simulaters, including SuperSpice, support the
Parker-Skellern jfet level=2 model
http://www.elec.mq.edu.au/cnerf/psmodel.htm. This model appears to be
nuts on.

There is pdf on that page that describes the model, including
subthreshold region.

Kevin Aylward
informationEXTRACT@anasoft.co.uk
http://www.anasoft.co.uk
SuperSpice, a very affordable Mixed-Mode
Windows Simulator with Schematic Capture,
Waveform Display, FFT's and Filter Design.
 

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